Porous Silicon Nitride Grid
Product Features
Porous silicon nitride TEM carrier mesh is based on high-purity monocrystalline silicon and ultra-thin silicon nitride (10-50nm) as the supporting film. It adopts ultra-high temperature coating technology and has the characteristics of low stress corrosion resistance and radiation resistance. It can achieve atomic resolution, especially suitable for atomic resolution characterization under spherical aberration electron microscopy, and is very convenient for transfer analysis between different analytical instruments. Such as TEM, AFM, XRD, EXAFS, Raman, etc.