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Porous Silicon Nitride Grid

Porous Silicon Nitride Grid

Porous silicon nitride TEM carrier mesh is based on high-purity monocrystalline silicon and ultra-thin silicon nitride (10-50nm) as the supporting film. It adopts ultra-high temperature coating technology and has the characteristics of low stress corrosion resistance and radiation resistance. It can achieve atomic resolution, especially suitable for atomic resolution characterization under spherical aberration electron microscopy, and is very convenient for transfer analysis between different analytical instruments. Such as TEM, AFM, XRD, EXAFS, Raman, etc.

Static Liquid Cell

Static Liquid Cell

The upper and lower chips are formed into a Liquid Cell by bonding the inner seal and epoxy resin outer seal. EDS, EELS, SAED, HRTEM, STEM and other different modes are combined in TEM. The key information such as microstructure evolution, reaction kinetics, phase transition, element valence, chemical change, microscopic stress, and atomic structure and composition evolution at the surface/interface of the sample in the liquid atmosphere can be monitored in real time and even at the atomic level.

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